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| SMD Type Medium Power Transistor 2SC4097 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors Unit: mm Features +0.1 2.4-0.1 High ICMax. ICMax. = 0.5A Low VCE(sat). Optimal for low voltage operation. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 40 32 5 0.5 0.2 150 -55 to +150 Unit V V V A W Electrical Characteristics Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector cutoff current Emitter cutoff current DC Current Gain Collector-emitter saturation voltage Output capacitance Transition frequency Symbol VCBO VCEO VEBO ICBO IEBO hFE IC = 100iA IC = 1mA IE = 100iA VCB = 20V VEB = 4V VCE = 3V, IC = 10mA 120 Testconditons Min 40 32 5 1 1 390 0.6 6.5 250 V pF MHz Typ Max Unit V V V A A VCE(sat) IC/IB = 500mA/50mA Cob fT VCB = 10V, IE = 0A, f = 1MHz VCE = 5V, IE = -20mA, f = 100MHz hFE Classification Marking hFE CQ 120 270 CR 180 390 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn www.kesenes.com 1 SMD Type 2SC4097 Typlcal Characteristics Transistors Diodes Fig.1 Grounded Emitter Propagation Characteristics Fig.2 Grounded Emitter Output Characteristics Fig.3 Grounded Emitter Output Characteristics Fig.4 Collector-Emitter Saturation Voltage vs. Collector Current Fig.5 DC Current Gain vs. Collector Current Fig. 6 Gain Bandwidth Product vs. Emitter Current Fig.7 Collector Output Capacitance vs. Collector-Base Voltage Emitter Input Capacitance vs. Emitter-Base Voltage 2 www.kexin.com.cn |
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